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Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T IXTA 180N055T IXTP 180N055T
VDSS ID25
RDS(on)
= 55 V = 180 A = 4.0 m
TO-3P (IXTQ)
Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M
Maximum Ratings 55 55 20 V V V TO-220 (IXTP) A A A A
G (TAB) G D S (TAB)
TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C
180 75 600 75 1.0 3 360 -55 ... +175 175 -55 ... +150
J V/ns W C C C C C
G = Gate S = Source
DS
TO-263 (IXTA)
G
S (TAB) D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-3P TO-220 TO-263 (TO-3P / TO-220)
300 260
Md Weight
1.13/10 Nm/lb.in. 5.5 4 3 g g g
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 1 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 55 2.0 4.0 200 1 250 3.3 4.0 V V nA A A m
Advantages Easy to mount Space savings High power density
VGS = 10 V, ID = 50 A Pulse test, t 300 s, duty cycle d 2 %
(c) 2005 IXYS All rights reserved
DS99342(02/05)
IXTA 180N055T IXTP 180N055T IXTQ 180N055T
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 70 90 5800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1190 138 37 VGS = 10 V, VDS = 40 V, ID = 40A RG = 5 (External) 61 65 36 160 VGS= 10 V, VDS = 30 V, ID = 90 A 46 47 S pF pF pF ns ns ns ns nC nC nC 0.42 K/W (TO-3P) (TO-220) 0.21 0.25 K/W K/W TO-3P (IXTQ) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 50A, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 180 600 1.2 A A V TO-220 (IXTP) Outline
IF = 50 A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 25 V 80 0.4
ns C
TO-263 (IXTA) Outline
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
Pins:
1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXTA 180N055T IXTP 180N055T IXTQ 110N055T
Fig. 1. Output Characteristics @ 25C
180 160 140 VGS = 10V 9V 8V 7V 6V 350 VGS = 10V 300 250 9V 8V 7V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6
6V 200 150 100 50 0 5V
5V
0.7
0.8
0.9
0
0.5
1
1.5
2
2.5
3
3.5
4
V D S - Volts Fig. 3. Output Characteristics @ 150C
180 160 140 VGS = 10V 9V 8V 7V 6V 2 1.8 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
I D = 180A 1.6 1.4 1.2 1 0.8 0.6 I D = 90A
I D - Amperes
120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1
5V
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
2.2 2 90 80 TJ = 175C 70
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
External Lead Current Limit
R D S ( o n ) - Normalized
1.8 1.6
I D - Amperes
350
60 50 40 30 20 10 0
VGS = 10V 1.4 1.2 TJ = 25C 1 0.8 0 50 100 150 200 250 300 VGS = 15V
-50
-25
0
25
50
75
100
125
150
175
I D - Amperes
(c) 2005 IXYS All rights reserved
TC - Degrees Centigrade
IXTA 180N055T IXTP 180N055T IXTQ 180N055T
Fig. 7. Input Adm ittance
250 225 200 140 120 100
Fig. 8. Transconductance
150 125 100 75 50 25 0 2 2.5 3 3.5 4 4.5 5 5.5 6 TJ = 150C 25C -40C
g f s - Siemens
175
I D - Amperes
80 60 40 20 0 0 25 50 75 100 125 150 175 200 225 250
TJ = -40C 25C 150C
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
350 300 8 250 7 10 9 VDS = 30V I D = 90A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 150C TJ = 25C 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
200 150 100 50
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160
0
V S D - Volts
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 R DS(on) Limit
Fig. 11. Capacitance
10,000
Capacitance - picoFarads
Ciss
I D - Amperes
25s 100 1ms 10ms TJ = 175C TC = 25C 10 DC 100s
1,000
Coss
f = 1MHz
100 0 5 10 15 20 25 30
Crss
35
40
1
10
100
IXYS reserves the right to change limits, test conditions, and dimensions.
V DS - Volts
V D S - Volts
IXTA 180N055T IXTP 180N055T IXTQ 180N055T
Fig. 13. Maximum Transient Thermal R esistance
1.00
R( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000
P W -m ulse idth illiseconds
(c) 2005 IXYS All rights reserved

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